期刊
VACUUM
卷 171, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2019.109012
关键词
beta-Ga2O3; Schottky diodes; Barrier inhomogeneities; Schottky barrier parameters; Double Gaussian distribution; Interface state density
资金
- National Research Foundation of Korea - Ministry of Education, Republic of Korea [NRF-2017R1A2B2003365]
- R&D program - Ministry of SMEs and Startups, Republic of Korea [S2718967]
- Korea Technology & Information Promotion Agency for SMEs (TIPA) [S2718967] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This study examined the temperature-dependent current-voltage (I-V) characteristics of the Ni/Au Schottky contact to beta-Ga2O3. The Au/Ni/beta-Ga2O3 Schottky diode showed a good rectifying behavior. The on-resistance and rectification ratio decreased with increasing temperature, which could be ascribed to the increase in the number of thermally activated electrons. The Au/Ni/beta-Ga2O3 Schottky diode exhibited the strong temperature-dependence of Schottky barrier parameters, indicating the presence of inhomogeneous Schottky barrier prevailing in the interface between Ni and beta-Ga2O3. The inhomogeneities were analyzed using thermionic emission with assuming a Gaussian distribution of barrier heights. The results revealed the existence of a double Gaussian distribution of barrier heights in the diode with a transition occurring at 225 K. The modified Richardson plot was evaluated using a Gaussian distribution approach and yielded a Richardson constant closely matching with the theoretical value of beta-Ga2O3. The density of interface states, extracted using I-V characteristics, increased with decreasing temperature, which could be associated with the thermally-driven restructuring and reordering of the Ni/beta-Ga2O3 interface state.
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