期刊
THIN SOLID FILMS
卷 693, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2019.137636
关键词
Ferroelectricity; Thin films; Silicon; Epitaxy; Radio-frequency magnetron sputtering; Infrared spectroscopy; Phonon
类别
资金
- ARC4 Energy
- Region Rhone-Alpes
- Natural Science Foundation of China [51602247]
- Natural Science Fundamental research Project of Shaanxi province of China [2017JQ6003]
- Synchrotron SOLEIL
BaTiO3 thin films (60 nm-thick) grown on SrTiO3/Si templates have been characterized for their structural and electrical properties. The epitaxy of the BaTiO3 film on silicon was confirmed by X-ray diffraction with good crystallinity. The temperature-dependent structural properties were checked by infrared spectroscopy in absorption mode. The films were found to remain in a single ferroelectric phase over a temperature range from 5 to 385 K. Low-temperature orthorhombic-rhombohedral phase transitions characteristic of bulk BaTiO3 are absent in the films due to the clamping effect from the Si substrate.
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