ULTRAVIOLET ILLUMINATION RESPONSIVITY OF THE Au/n-Si DIODES WITH AND WITHOUT POLY (LINOLENIC ACID)-G-POLY (CAPROLACTONE)-G-POLY (T-BUTYL ACRYLATE) INTERFACIAL LAYER

Au/n-Si (MS) and Au/Poly (linolenic acid)-g-poly (caprolactone)-g-poly (t-butyl acrylate) (PLilPCLPtBA)/n-Si (MPS) diodes were fabricated to investigate the electrical and responsivity effects of interfacial layer on the diodes under ultra violet (UV) illumination. Electrospinning method was used for coating of the PLilPCLPtBA polymer layer on n-Si single crystal as nanofibers. Surface formation and nanofiber characteristics of the polymer layer were investigated by an electron microscope. The current-voltage (I-V) measurements of the MS and MPS diodes were carried out in dark and under UV (365 nm) illumination conditions at room temperature. Basic electrical parameters of the diodes; such as reverse bias saturation current (I-0), zero bias barrier height (Phi(B0)), ideality factor (n), series resistance (R-s) and interface state density (N-ss) were extracted from the experimental I-V measurements by thermionic emission and Norde equations. Also, power law of the photocurrents (I-pc) and responsivity (R) behavior were obtained and given comparatively.