4.7 Article

Two-dimensional Cd-doped porous Co3O4 nanosheets for enhanced room-temperature NO2 sensing performance

期刊

SENSORS AND ACTUATORS B-CHEMICAL
卷 305, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2019.127393

关键词

Microwave-assisted solvothermal method; Cd-doped Co3O4; Nanosheets; Room-temperature gas sensors; NO2 detection

资金

  1. National Natural Science Foundation of China [61671299, 61971284]
  2. Center of Hydrogen Science at SJTU
  3. Startup Fund for Youngman Research at SJTU
  4. Medical Engineering Crossover Fund of SJTU [YG2016MS26, YG2019QNA13]

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P-type Co3O4 has received ever-growing interest as a promising gas-sensing material due to the unique advantages of low-cost, earth abundance and considerable electrical conductivity at relatively low temperature. Herein, we designed and fabricated two-dimensional (2D) Cd-doped porous Co3O4 nanosheets through a microwave-assisted solvothermal method and subsequently in-situ annealing process. It is found that as-prepared 5 %-Cd-Co3O4-based gas sensor shows a significantly improved response value of 3.38 (R-a/R-g) and a relatively lower recovery time of 620 s for NO2 detection at room temperature (25 degrees C). Additionally, the sensor displays a wide detection range for NO2 detection low to 154 ppb (low theoretical limit of detection), outstanding selectivity compared with some volatile organic compounds, and excellent long-term stability for 6 months. The results of experiments and the corresponding Lewis acid-base theory reveal that the excellent room-temperature sensing performance is mainly promoted by the Cd dopant through a combined set of factors, including enhanced electronic conductivity, increased oxygen vacancy concentration and formed Co2+-O-2(-center dot) to improve NO2 adsorption. However, the further increased concentration of Cd2+ as Lewis acid sites will decrease the adsorption of NO2 that can benefit for improving recovery performance. Thus, the demonstration of such 2D Cd-doped porous Co3O4 nanosheets provides valuable insights for the p-type metal oxide semiconductor-based room-temperature gas sensors.

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