期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 35, 期 2, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1361-6641/ab6102
关键词
ultrawide bandgap semiconductors; solar blind photodetectors; gallium oxide
类别
资金
- National Key RD Project [2018YFB0406502, 2017YFB0403003]
- State Key RAMP
- D project of Jiangsu [BE2018115]
- National Nature Science Foundation of China [61774081, 91850112]
- Natural Science Foundation of Jiangsu Province [BK20161401]
- Shenzhen Fundamental Research Project [201773239, 201888588]
- State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices [2017KF001]
- Fundamental Research Funds for the Central Universities [021014380135, 021014380110]
Gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconducting material as a key building block for the applications of power electronics, solar blind photodetectors and deep ultraviolet optoelectronics beyond existing technologies. To date, solar-blind photodetectors based on Ga2O3 in the various forms of bulk crystals, epitaxial thin films, nanostructures, and heterostructures have been demonstrated with either high performance or multiple functionalities, however, several remaining challenges require proper solutions for practical applications. In this topic review, we summarized recent advances in processing and device performance of solar photodetectors based on Ga2O3 and the associated physical mechanisms behind according to the architecture of photodetectors. The feasibility of p-type doping, the defect behavior, and radiation effects on the device performance have been discussed. The demonstration of novel and advanced architectures such as phototransistors, highly narrow-band photodetectors, photodetector arrays, and integrated NEMS resonance oscillators for real-time ultraviolet light detection are included. This review may provide better understanding on the optoelectronics properties of the Ga2O3 emerging material to fully exploit its promising optoelectronic applications in deep ultraviolet spectral region.
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