期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 35, 期 5, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/ab6ac1
关键词
a-Ga2O3; solar-blind detector; ultraviolet photodetector; high responsivity; oxygen vacancy
类别
资金
- National Key Research and Development Program of China [2018YFB0406702]
- InnovationDriven Project of Central South University, China [2018CX001]
- Natural science foundation of hunan province, China [2019JJ50751]
- Project of State Key Laboratory of High-Performance Complex Manufacturing, Central South University, China [ZZYJKT2018-01, ZZYJKT2019-13]
- Professorship Start-up Funding [217056]
Solar-blind ultraviolet photodetectors have potential applications in space communication, ozone hole monitoring and missile tracking. Amorphous Ga2O3 (a-Ga2O3) films are deposited by a simple radio frequency magnetron sputtering at different deposition temperatures. Fully transparent devices on a quartz substrate are fabricated with high responsivity, wide detection range and good repeatability. With the increase of Ga2O3 deposited temperature, the concentration of oxygen vacancy increases accordingly, leading to a wide detection range from 250 to 325 nm and high responsivity (138 A W-1 at 5 V bias). The underlying mechanism has been discussed and analyzed. Our results should advance the application of a-Ga2O3-based ultraviolet photodetectors and other relevant devices.
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