Effect of the F-D Exchange Interaction on the Properties of Thin-Film Mdm Structures (M-Fe, Co, Ni; D-Tb2O3)

The effect of f-d interaction on the current-voltage characteristics of metal-dielectric-metal (MDM) structures consisting of contacting layers of d metals (Fe, Co, Ni) and rare-earth metal (REM) oxides is studied. The f-d exchange interaction between atoms with unfilled f and d electron shells in the thin-film (Fe, Co, Ni)/Tb2O(3)/(Fe, Co, Ni) MDM structure significantly decreases the potential barrier to transfer of charges between the electrodes. The force and energy of f-d interaction that influence the movement of an electron in the MDM structure have been determined in conditions of the overbarrier charge transfer mechanism. The effect of f-d interaction on the current-voltage characteristics of MDM structures weakens with higher temperature and enhances with stronger magnetic field. This may be associated with the influence of these factors on the ordering of magnetic moments of f and d atoms in the f-d interaction region.