期刊
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
卷 257, 期 4, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.201900553
关键词
birefringence microscope; dislocation; gallium nitride
资金
- MEXT, Program for research and development of next generation semiconductor to realize energy-saving society
- JSPS KAKENHI [JP17858100]
Herein, a newly developed birefringence microscope is used to observe dislocations in gallium nitride (GaN) substrates. The comparison results of the observation method using this microscope with other observation methods, such as X-ray topography and Raman microscopy, confirms that dislocations in a GaN substrate can be detected with a birefringence microscope. In addition, the observation can be carried out as easily as with an optical microscope. It is also found that under certain observation conditions, the direction of the edge component of dislocations can be determined.
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