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Hong Li et al.
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Nanoparticle shapes by using Wulff constructions and first-principles calculations
Georgios D. Barmparis et al.
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Systematic Theoretical Theoretical Investigations on Surface Reconstruction and Adatom Kinetics on AlN Semipolar Surfaces
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Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
Byung Oh Jung et al.
CRYSTENGCOMM (2014)
Absolute surface energies of polar and nonpolar planes of GaN
C. E. Dreyer et al.
PHYSICAL REVIEW B (2014)
Morphology Evolution of Pulsed-Flux Ga-Polar GaN Nanorod Growth by Metal Organic Vapor Phase Epitaxy and Its Nucleation Dependence
Si-Young Bae et al.
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Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE
Shunfeng Li et al.
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Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition
Yen-Ting Lin et al.
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GaN nanodiscs embedded in nanowires as optochemical transducers
J. Teubert et al.
NANOTECHNOLOGY (2011)
Thermal conductivity and dynamic heat capacity across the metal-insulator transition in thin film VO2
Dong-Wook Oh et al.
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Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
Hiroto Sekiguchi et al.
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Theoretical prediction of GaN nanostructure equilibrium and nonequilibrium shapes
Vibhu Jindal et al.
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Understanding nonpolar GaN growth through kinetic Wulff plots
Qian Sun et al.
JOURNAL OF APPLIED PHYSICS (2008)
Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire by MOVPE
R. Miyagawa et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Semiconductor nanowire laser and nanowire waveguide electro-optic modulators
AB Greytak et al.
APPLIED PHYSICS LETTERS (2005)
Surface energy and the common dangling bond rule for semiconductors
SB Zhang et al.
PHYSICAL REVIEW LETTERS (2004)
Polarity inversion of GaN films by trimethyl-aluminum preflow in low-pressure metalorganic vapor phase epitaxy growth
DH Lim et al.
JOURNAL OF APPLIED PHYSICS (2002)
Gallium nitride nanowire nanodevices
Y Huang et al.
NANO LETTERS (2002)
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
K Hiramatsu et al.
JOURNAL OF CRYSTAL GROWTH (2000)