期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 217, 期 3, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201900629
关键词
GaN; hydride vapor-phase epitaxy; reactors
An hydride vapor-phase epitaxy reactor for the growth of bulk GaN crystals with a diameter of 50 mm is developed. Growth rate nonuniformity of 1% is achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically resistant refractory materials are used instead of quartz in the reactor hot zone. High-capacity external gallium precursor sources are developed for the nonstop growth of the bulk GaN layers. A load-lock vacuum chamber and a dry in situ growth chamber cleaning are implemented to improve the growth process reproducibility. Freestanding GaN crystals with a diameter of 50 mm are grown with the reactor.
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