期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 217, 期 7, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201900760
关键词
epitaxy; GaN on silicon; radio frequency; transistors
资金
- technology facility network RENATECH
- French National Research Agency (ANR) [ANR-16-ASTR-0006-01, ANR-11-LABX-0014]
Herein, the interest of cubic silicon carbide as a template for the growth of AlGaN/GaN high electron mobility transistor (HEMT) heterostructures on silicon substrates for high-frequency operation is shown. On the one hand, 0.6-0.8 mu m-thick 3C-SiC grown by chemical vapor deposition on intrinsic silicon substrate having initial resistivity superior to 5 k omega cm enables the metalorganic vapor phase epitaxy of GaN buffer layers with propagation losses below 0.4 dB mm(-1) at 40 GHz and 0.5 dB mm(-1) at 67 GHz. On the other hand, an HEMT heterostructure is grown on 1.5 mu m-thick 3C-SiC on 4 degrees off-axis silicon substrate having an initial resistivity superior to 200 omega cm that allows to keep a sufficiently resistive epilayer stack limiting the loss up to 0.78 dB mm(-1) at 40 GHz. Device process developed on a piece of the 100 mm diameter wafer leads to the demonstration of DC transistor operation with low leakage currents. Compared with direct growth on silicon, these templates enable reduced radio frequency (RF) propagation losses that are very interesting for high-frequency transistors and circuits operation.
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