Electron-interface phonon scattering in quantum wells due to absorbtion and emission of interface phonons

In this article, using the operator projection technique, we will theoretically study the electron-interface phonon scattering process due to the absorbtion and emission of interface phonons by calculating the expression for the absorption power (AP) in GaAs/AlAs quantum wells (QWs). The full width at half maximum (FWHM) of the magneto-interface phonon resonance peaks was obtained by using the profile method. The FWHM is given as functions of the temperature, well width, and magnetic field presented to compare for both the barrier material AlAs and well material GaAs in the two cases of emission and absorbtion of interface modes. The result clearly demonstrates important roles of the interface optical modes when the well width is small enough.