4.6 Article

Highly stable flexible organic field-effect transistors with Parylene-C gate dielectrics on a flexible substrate

期刊

ORGANIC ELECTRONICS
卷 75, 期 -, 页码 -

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ELSEVIER
DOI: 10.1016/j.orgel.2019.105391

关键词

Organic field-effect transistor; Gate dielectric; Parylene-C; Polystyrene; 6,13-Bis(triisopropylsilylethynyl)pentacene; Blend system

资金

  1. Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education, Science, and Technology [2012M3A6A5055225]
  2. Korea Institute for Advancement of Technology (KIAT) - Korea Government (MOTIE) [P00008500]
  3. Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) from the Ministry of Trade, Industry & Energy, Republic of Korea [20174030201760]
  4. Korea Evaluation Institute of Industrial Technology (KEIT) [20174030201760] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Poly(chloro-p-xylene), or Parylene-C, is a polymeric insulating material that has good physical and chemical properties, such as a high dielectric strength, a pin-free surface, and good mechanical/chemical stability, but is difficult to apply to top-contact-structured OFETs since its hydrophobic and very rough surfaces hinder the growth of organic semiconductor crystals and promote the formation of interface traps. Herein, we applied a blend of PS and TIPS-PEN dissolved in 1,2,3,4 tetrahydronaphthalene to overcome these limitations of Parylene-C. To confirm the influence of this system, we analyzed the morphologies of crystals grown on Parylene-C surfaces modified by various organic and polymer materials, including methacryloxypropyltrimethoxysilane, hexamethyldisilazane, and dimethylchlorosilane-terminated polystyrene. Our investigation showed the ability of the PS:TIPS-PEN blend system to be used to overcome the above-described limitations of Parylene-C, and to manufacture top-contact OFETs displaying stable operation under gate-bias stress. Notably, we applied Parylene-C and this blend system in practical flexible OFETs that displayed highly stable properties.

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