期刊
OPTICAL AND QUANTUM ELECTRONICS
卷 52, 期 1, 页码 -出版社
SPRINGER
DOI: 10.1007/s11082-019-2137-9
关键词
HgCdTe; Infrared photodetectors; FDTD simulations; Focal plane arrays; Multiphysics simulations
In state-of-the-art, large format, HgCdTe-based infrared focal plane arrays the typical pixel size (3-10 mu m) is of the order of the operating wavelength and much smaller than the carrier diffusion length. This makes inter-pixel crosstalk a limiting factor, especially in planar structures. Employing three-dimensional electromagnetic and electrical simulations we show that, besides reducing the dark current through Auger suppression, majority carrier depletion of the detector absorber is also effective in curtailing the inter-pixel crosstalk due to carrier diffusion. In the case of a 5 mu m-pitch pixel, a proper design of the absorber composition and doping profile allows to reduce inter-pixel crosstalk by more than a factor of two when increasing the reverse bias from -0.1 to -0.5V, keeping the contribution to crosstalk coming from carrier diffusion between 2 and 12% in the mid- and long-wavelength infrared spectrum.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据