期刊
NANOSCALE RESEARCH LETTERS
卷 15, 期 1, 页码 -出版社
SPRINGEROPEN
DOI: 10.1186/s11671-020-3273-7
关键词
Au-ZnO; Heterostructures; H2O2; Atomic layer deposition; Amperometric detection
资金
- Gent University BOF Grant [BOF17/STA/015]
Nanoscale Au-ZnO heterostructures were fabricated on 4-in. SiO2/Si wafers by the atomic layer deposition (ALD) technique. Developed Au-ZnO heterostructures after post-deposition annealing at 250 degrees C were tested for amperometric hydrogen peroxide (H2O2) detection. The surface morphology and nanostructure of Au-ZnO heterostructures were examined by field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), etc. Additionally, the electrochemical behavior of Au-ZnO heterostructures towards H2O2 sensing under various conditions is assessed by chronoamperometry and electrochemical impedance spectroscopy (EIS). The results showed that ALD-fabricated Au-ZnO heterostructures exhibited one of the highest sensitivities of 0.53 mu A mu M(-1)cm(-2), the widest linear H2O2 detection range of 1.0 mu M-120mM, a low limit of detection (LOD) of 0.78 mu M, excellent selectivity under the normal operation conditions, and great long-term stability. Utilization of the ALD deposition method opens up a unique opportunity for the improvement of the various capabilities of the devices based on Au-ZnO heterostructures for amperometric detection of different chemicals.
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