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Heteroatom doping of two-dimensional materials: From graphene to chalcogenides

期刊

NANO TODAY
卷 30, 期 -, 页码 -

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.nantod.2019.100829

关键词

2D materials; Transition metal dichalcogenides; MoS2; WS2; Graphene; Sensing; Sensor; Electronics; TMD; Doping; Molybdenum disulfide; Tungsten disulfide

资金

  1. Air Force Office of Scientific Research (AFOSR) [FA9550-18-1-0072]
  2. NSF-IUCRC Center for Atomically Thin Multifunctional Coatings (ATOMIC)

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In recent years, research on two-dimensional (2D) materials including graphene and transition metal dichalcogenides (TMDCs), especially molybdenum and tungsten disulfides (MoS2 and WS2), has rapidly developed. In order to meet the increasing demands of using these 2D materials in fields as diverse as optoelectronics and sensing, heteroatom doping has become an effective method to tune their electronic and physico-chemical properties. This review discusses versatile doping methods applied to graphene and TMDCs, the corresponding changes to their properties, and their potential applications. Future perspectives and new emerging areas are also presented. (C) 2019 Elsevier Ltd. All rights reserved.

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