期刊
NANO LETTERS
卷 20, 期 1, 页码 658-663出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b04419
关键词
Color centers; graphene; photoluminescence; Stark effect
类别
资金
- Deutsche Forschungsgemeinschaft [WE3542/10-1]
We present a versatile scheme dedicated to exerting strong electric fields up to 0.5 MV/cm on color centers in hexagonal silicon carbide, employing transparent epitaxial graphene electrodes. In both the axial and basal direction equally strong electric fields can be selectively controlled. Investigating the silicon vacancy (V-Si) in ensemble photoluminescence experiments, we report Stark splitting of the V1' line of 3 meV by a basal electrical field and a Stark shift of the V1 line of 1 meV in an axial electric field. The spectral fine-tuning of the V-Si, being an important candidate for realizing quantum networks, paves the way for truly indistinguishable single-photon sources.
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