期刊
NANO LETTERS
卷 20, 期 4, 页码 2654-2659出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c00232
关键词
GaAs; AlGaAs; nanowire; photodetector; two-dimensional electron-hole tube; photoresponse
类别
资金
- National Natural Science Foundation of China [61574022, 61674021, 11674038, 61704011, 61851403, 61811540408, 61904017, 61925403]
- Changchun University of Science and Technology Foundation, China [XQNJJ-2018-18]
Here, we design and engineer an axially asymmetric GaAs/AlGaAs/GaAs (G/A/G) nanowire (NW) photodetector that operates efficiently at room temperature. Based on the I-type band structure, the device can realize a two-dimensional electron-hole tube (2DEHT) structure for the substantial performance enhancement. The 2DEHT is observed to form at the interface on both sides of GaAs/AlGaAs barriers, which constructs effective pathways for both electron and hole transport in reducing the photocarrier recombination and enhancing the device photocurrent. In particular, the G/A/G NW photodetector exhibits a responsivity of 0.57 A/W and a detectivity of 1.83 x 10(10) Jones, which are about 7 times higher than those of the pure GaAs NW device. The recombination probability has also been significantly suppressed from 81.8% to 13.2% with the utilization of the 2DEHT structure. All of these can evidently demonstrate the importance of the appropriate band structure design to promote photocarrier generation, separation, and collection for high-performance optoelectronic devices.
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