期刊
NANO LETTERS
卷 20, 期 3, 页码 1731-1737出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b04932
关键词
magnetic topological insulators; anomalous Hall effect; heterostructure engineering molecular beam epitaxy; Berry curvature
类别
资金
- National Key R&D Program of China [2017YFB0405704]
- National Natural Science Foundation of China [11904230, 61874172]
- Major Project of Shanghai Municipal Science and Technology [2018SHZDZX02]
- Shanghai Sailing Program [19YF1433200, 17YF1429200]
- Engineering and Physical Sciences Research Council [EP/N032128/1]
- 1000-Young Talent Program of China
- EPSRC [EP/N032128/1] Funding Source: UKRI
Engineering the anomalous Hall effect (AHE) is the key to manipulate the magnetic orders in the emerging magnetic topological insulators (MTIs). In this letter, we synthesize the epitaxial Bi2Te3/MnTe magnetic heterostructures and observe pronounced AHE signals from both layers combined together. The evolution of the resulting hybrid AHE intensity with the top Bi2Te3 layer thickness manifests the presence of an intrinsic ferromagnetic phase induced by the topological surface states at the heterolayer interface. More importantly, by doping the Bi2Te3 layer with Sb, we are able to manipulate the sign of the Berry phase-associated AHE component. Our results demonstrate the unparalleled advantages of MTI heterostructures over magnetically doped TI counterparts in which the tunability of the AHE response can be greatly enhanced. This in turn unveils a new avenue for MTI heterostructure-based multifunctional applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据