期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 105, 期 -, 页码 -出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2019.104729
关键词
ZnS thin film; Hydrazine; Chemical bath deposition; CIGS solar cell
类别
资金
- Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) - the Ministry of Science, ICT of Future Planning of Republic of Korea [NRF-2016M1A2A2936754, NRF-2017M1A2A2087577]
- Ministry of Trade, Industry and Energy (MOTIE)
- Korea Institute for Advancement of Technology (KIAT) through the National Innovation Cluster R&D program of Republic Korea [P0006704]
We investigated the hydrazine effect on the physical characteristics of zinc sulfide (ZnS) thin films on both the soda-lime glass substrate and the Cu(In,Ga)Se-2 (CIGS) absorber layer as a function of its relative content r(c) with respect to ammonia as well as the deposition time t(d) in the chemical bath deposition. As the rc varied from 0 to 1.39, all the deposited ZnS films using hydrazine as a secondary complexing agent showed nearly identical characteristics of amorphous structure with the composition of [S/(S + O)] similar to 0.32 and the direct energy bandgap of E-g = 3.54-3.75 eV. However, they exhibited a strong dependence of light transmission on the longer deposition times td (>= 70 min), due to the enhancement of the areal density of in-plane grains. By applying the ZnS buffer on top of the CIGS, the heterojunction device showed the best solar cell performance with eta=12.03%, V-oc=0.549 V, J(sc)=32.92 mA/cm(2), FF=66.7% from the ZnS buffer grown at r(c)=0.28 and t(d)=30 min. When compared to only ammonia, the relative hydrazine was found to play a key role in the deposition of ZnS to expedite the in-plane grain growth by 6 times accompanied both with a reduction of in-plane grain size and a denser packing density.
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