Near infrared radiation shielding using CsxWO3 nanoparticles for infrared mini light-emitting diodes

Recently, near infrared LEDs have been used in small electronic devices due to the trend of manufacturing compact systems. The intensity of near infrared (NIR) optical device needs to be moderated if the chip emits too much power. In tradition, color pigments are used as additives in the encapsulant of LEDs to reduce the intensity of over irradiated NIR, a strategy which results in unaesthetic appearance. Cesium doped tungsten trioxide (CsxWO3) nanoparticles (NPs) have good near infrared absorption ability. Applying very few amount of CsxWO3 NPs into the encapsulation materials of NIR optical device can decrease NIR intensity while still maintain high visible light transmittance without losing aesthetic touch of those devices such as LED transmitters. The addition of only 0.0021 wt% CsxWO3/PMA dispersion in epoxy encapsulant can drop 15.5% NIR (860 nm) intensity but barely reduce visible light (only 3.2% at 450 nm). The excellent performance of CsxWO3 NPs; i.e., good NIR absorption and visible light transmission properties, can be suitable for maintaining the moderate luminescence intensity of small optoelectronic devices like NIR mini- or micro- light-emitting diodes. (C) 2019 Elsevier B.V. All rights reserved.