期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
卷 38, 期 2, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.5134077
关键词
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资金
- Air Force Office of Scientific Research [FA9550-14-1-0090]
- National Science Foundation (NSF) [DMR-1207342]
- National Science Foundation [DMR-1707372]
BaTiO3 (BTO) and LaxSr1 - xTiO3 (x <= 0.15) perovskite heterostructures are deposited epitaxially on SrTiO3 (STO)-buffered Si(001) via atomic layer deposition (ALD) to explore the formation of a quantum metal layer between a ferroelectric film and silicon. X-ray diffraction and scanning transmission electron microscopy show the crystallinity of the heterostructure deposited by ALD. After postdeposition annealing of the La-doped STO film in ultrahigh vacuum at 600 degrees C for 5 min, x-ray photoelectron spectra show the lack of La-dopant activation when the film is deposited on 10 nm-thick BTO. The same postdeposition annealing condition activates the La-dopant when LaxSr1 - xTiO3 films are deposited on STO-buffered Si(001) surfaces consisting of 2.8 nm of STO(001) on Si(001). Annealing of LaxSr1 - xTiO3 films sandwiched between BTO and STO-buffered Si(001) layers in air at temperatures <= 350 degrees C preserves the La-dopant activation. Piezoresponse force microscopy demonstrates the ferroelectric behavior of BTO films grown on LaxSr1 - xTiO3 surfaces. Sheet resistance and capacitance-voltage measurements further demonstrate the conductivity of the LaxSr1 - xTiO3 films sandwiched between the BTO film and the Si(001) substrate.
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