High interfacial thermal resistance induced low thermal conductivity in porous SiC-SiO2 composites with hierarchical porosity

The incorporation of a thermally insulating secondary phase can significantly increase the interfacial thermal resistance attributed to its low intrinsic thermal conductivity and the creation of multiple phonon scattering interfaces between adjacent SiC particles. The newly developed porous SiC-33 wt% SiO2 composites with SiO2 as a thermally insulating secondary phase exhibited a very low thermal conductivity (0.047 Wm(-1) K-1, 72.4 % porous), which is an order of magnitude lower than the previously reported lowest thermal conductivity (0.14 Wm(-1) K-1, 76.3 % porous) for powder processed porous SiC ceramics and is even lower than the thermal conductivity (0.060 Wm(-1) K-1, 87.9% porous) of Si02 aerogel. The porous SiC-(16-73 wt%) SiO2 composites processed from nano beta-SiC and a 40 wt% carbon template exhibited a hierarchical (meso-/macro-porous) pore structure that transformed to a trimodal (micro-/meso-/macro-porous) porous structure when polysiloxane was added and sintering was performed at 600-1000 degrees C in air.