4.8 Article

Band Sharpening and Band Alignment Enable High Quality Factor to Enhance Thermoelectric Performance in n-Type PbS

期刊

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 142, 期 8, 页码 4051-4060

出版社

AMER CHEMICAL SOC
DOI: 10.1021/jacs.0c00306

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资金

  1. National Key Research and Development Program of China [2018YFA0702100, 2018YFB0703600]
  2. National Natural Science Foundation of China [51772012, 51671015]
  3. Beijing Natural Science Foundation [JQ18004]
  4. Shenzhen Peacock Plan team [KQTD2016022619565991]
  5. 111 Project [B17002]
  6. National Postdoctoral Program for Innovative Talents [BX20190028]
  7. Postdoctoral Science Foundation of China [2019M660399]
  8. High Performance Computing Center of Henan Normal University
  9. Singapore Ministry of Education Tier 1 grant [R284-000-212-114]
  10. Ministry of Education, Singapore under its Tier 2 Grant [M0E2017-T2-1-129]
  11. National Science Fund for Distinguished Young Scholars [51925101]

向作者/读者索取更多资源

Low-cost and earth-abundant PbS-based thermoelectrics are expected to be an alternative for PbTe, and have attracted extensive attentions from thermoelectric community. Herein, a maximum ZT (ZT(max)) approximate to 1.3 at 923 K in n-type PbS is obtained through synergistically optimizing quality factor with Sn alloying and PbTe phase incorporation. It is found that Sn alloying in PbS can sharpen the conduction band shape to balance the contradictory interrelationship between carrier mobility and effective mass, accordingly, a peak power factor of similar to 19.8 mu Wcm(-1)K(-2) is achieved. Besides band sharpening, Sn alloying can also narrow the band gap of PbS so as to make the conduction band position between Pb0.94Sn0.06S and PbTe well aligned, which can benefit high carrier mobility. Therefore, incorporating the PbTe phase into the Pb0.94Sn0.06S matrix can not only favorably maintain the carrier mobility at similar to 150 cm(2)V(-1)s(-1) but also suppress the lattice thermal conductivity to similar to 0.61 Wm(-1)K(-1) in Pb0.94Sn0.06S-8%PbTe, which contributes to a largely enhanced quality factor. Consequently, an average ZT (ZT(ave)) approximate to 0.72 in 300-923 K is achieved in Pb(0.94)Sn(0.0)6S-8%PbTe that outperforms other n-type PbS-based thermoelectric materials.

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