期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 53, 期 8, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ab596f
关键词
beta-Ga2O3; Schottky and Ohmic contacts; optoelectrical characteristics; metal-organic chemical vapor deposition (MOCVD)
资金
- National Natural Science Foundation of China [61774019, 51572033, 51572241]
- Beijing Municipal Commission of Science and Technology, China [SX2018-04]
- Fundamental Research Funds for the Central Universities
- Foundation of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications)
Schottky and Ohmic contacts are key matters affecting carrier transport in oxide semiconductor-based electrical and optical devices. For Ga2O3, the comparison of optoelectrical behaviors and the fundamental physical mechanism between these two contacts are not well known yet. In this work, beta-Ga2O3 thin films were grown via metal-organic chemical vapor deposition then deposited with symmetrical Ni/Au (Schottky) or Ti/Au (Ohmic) contacts. Optoelectrical measurements show that the Ohmic contacted device exhibits superior responsivities thanks to its higher photocurrents. Meanwhile, for the Schottky contacted device, firstly, it has a faster response speed, and secondly it exhibits larger photo-to-dark current ratios owing to their low dark current. Specifically, the voltage- and light intensity-dependent responsivity and detectivities of the Schottky and Ohmic contacted devices were measured and discussed under the consideration of different voltages and UV light intensities.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据