期刊
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 11, 期 3, 页码 608-617出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.9b03569
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- Ministry of Science and Technology, Taiwan [MOST108-2622-E-011-006-CC2, MOST108-2221-E-011-138-M12, MOST107-2112-M-011-001-MY3]
In this study, near-infrared (NIR) x-polarized (P-state) light is created from the transmission ray of monoclinic multilayer GaTe near the band edge. The P-state transmittance photons are produced via the transmission light of a ribbonlike multilayer GaTe with a plurality of nanowire grids being parallel and constructed along the y direction (b axis) from 1.56 to 1.62 eV. At 300 K, a P-state excitonic emission at 1.652 eV can be clearly detected in polarized microphotoluminescence (mu PL) measurement. The free-exciton extinction energy and recombination lifetime of the band-edge exciton are evaluated and determined to be Delta E = 32 +/- 4 meV and tau approximate to 0.032 ns, respectively, for the multilayer GaTe. Polarized microthermoreflectance (mu TR) measurement also verifies that the x-polarizecl transition is allowed while y-polarized (S-state) transition is forbidden in the multilayer GaTe. An asymmetric p-to-p transition along the x polarization is thus inferred to comprise the band edge of multilayer GaTe to form in-plane optical anisotropy.
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