Fabrication and Electrical Properties of Silver Telluride Nanowires

As a new topological insulator material, the beta-phase silver telluride (Ag2Te) nanowire is a narrow bandgap semiconductor, which is attractive for its excellent properties. In this study, Ag2Te nanowires were synthesized by one-step hydrothermal method. The nanowires showed good electrical properties with maximum drain-source voltage of 1.5 V, and the output current was up to 20 mu A. The gate voltage has a significant effect on output current for the device. The Ag2Te nanowires will have more extensive and in-depth applications in the fields of optoelectronics and thermoelectricity.