Electrical Properties of Top-Gate β-Ga2O3 Nanomembrane Metal-Semiconductor Field-Effect Transistor

We fabricate top-gate beta-Ga2O3 nanomembrane metal-semiconductor field-effect transistor (MESFET) using a mechanical exfoliation method, and investigate its electrical performance. The Schottky contact between top-gate metal and beta-Ga2O3 (100) channel is evaluated by characterizing properties of Schottky barrier diode, exhibiting an on/off ratio of similar to 10(6), an ideality factor of 2.8 and a turn-on voltage of 1.1 V. The proposed top-gate beta-Ga2O3 nanomembrane MESFET exhibits maximum transconductance of similar to 0.23 mS/mm, field-effect mobility of 1.2 cm(2)/V . s at V-DS = 1 V and subthreshold slope (SS) of 180 mV/dec with high on/off ratio of >10(7). These results suggest that beta-Ga2O3 nanomembrane MESFET could be a promising component toward beta-Ga2O3-based high power device applications.