期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 49, 期 3, 页码 2003-2007出版社
SPRINGER
DOI: 10.1007/s11664-019-07871-7
关键词
Zinc tin oxide; thin film; thin film transistor; inkjet-printer; solution-based process
资金
- Yeungnam University [216A380108]
- Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) from the Ministry of Trade, Industry & Energy, Republic of Korea [20174030201760]
In this study, inkjet-printed zinc tin oxide:Cl (ZTO:Cl) thin films were analyzed using x-ray diffraction, x-ray photoelectron spectroscopy (XPS) and all the films were annealed at temperatures ranging from 100 degrees C to 600 degrees C. XPS analysis showed that the formation of metal-oxide bonds in the films was complete with annealing temperatures at or above 500 degrees C. Furthermore, inkjet-printed thin film transistors (TFTs) were examined using scanning electron microscopy and current-voltage characteristic measurements. The ZTO:Cl TFTs performed best when annealed at 500 degrees C. The average carrier mobility and the on/off ratio were found to be 2.71 cm(2)/V s and 1.82x10(7), respectively.
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