期刊
JOURNAL OF COLLOID AND INTERFACE SCIENCE
卷 561, 期 -, 页码 117-126出版社
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcis.2019.11.107
关键词
Few-layered MoS2; CTAB; Ion intercalation; Pseudo capacitance
资金
- National Natural Science Foundation of China [21574076, 61804091, U1510121, 21501113, 21602127]
- National Natural Science Foundation of Shanxi province [2015021129]
- Fund for Shanxi 1331 Project Key Innovation Team [TD201704]
- Engineering Research Center [PT201807]
The insertion and de-insertion of ions in layered materials are important processes during the energy storage. The investigation on the preparation and electrochemical properties of layered materials attracts a lot of attention. Here, few-layered MoS2 nanosheets are prepared by solvothermally treating ammonium tetrathiomolybdate ((NH4)(2)MOS4) in the presence of hydrazine and cetyltrimethylammonium bromide (CTAB). The structure and electrochemical properties of few-layered MoS2 have been characterized and explored in detail. The results show that ions intercalation causes an interlayer spacing change of the obtained MoS2, and that the prepared few-layered MoS2 exhibits fairly good specific capacitance (330.8 F g(-1) at 2.0 A g(-1)), a high rate capability (specific capacitance can still retain 256 F g(-1) at 40 A g(-1)) and good cycle stability (capacitance can retain 88.8 % over 5000 cycles). Furthermore, different from most of the current literatures in which MoS2's capacitance is generally attributed to electric double-layer capacitance, the relationships between current responses and scan rates uncover that few-layered MoS2's capacitance mainly comes from intercalation pseudo capacitance. The result of this work predicts that few layered-MoS2 can be developed as a promising electrode material for energy storage. (C) 2019 Elsevier Inc. All rights reserved.
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