期刊
JOURNAL OF CHEMICAL PHYSICS
卷 152, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5133390
关键词
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资金
- U.S. Department of Energy [DE-SC0004782]
- Intel
- U.S. Department of Energy (DOE) [DE-SC0004782] Funding Source: U.S. Department of Energy (DOE)
Atomic layer deposition (ALD) is a powerful tool for achieving atomic level control in the deposition of thin films. However, several physical and chemical phenomena can occur which cause deviation from ideal film growth during ALD. Understanding the underlying mechanisms that cause these deviations is important to achieving even better control over the growth of the deposited material. Herein, we review several precursor chemisorption mechanisms and the effect of chemisorption on ALD growth. We then follow with a discussion on diffusion and its impact on film growth during ALD. Together, these two fundamental processes of chemisorption and diffusion underlie the majority of mechanisms which contribute to material growth during a given ALD process, and the recognition of their role allows for more rational design of ALD parameters. Published under license by AIP Publishing.
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