期刊
JOURNAL OF APPLIED PHYSICS
卷 127, 期 4, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.5125882
关键词
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资金
- Brazilian agency: CNPq [303304/2010-3]
- Brazilian agency: CAPES [PNPD 88882.306206/2018-01]
- Brazilian agency: FAPESB [PNX 0007/2011, INT 0003/2015]
- Brazilian agency: FAPESP [15/16191-5]
- Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP) [15/16191-5] Funding Source: FAPESP
We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal-nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications. Published under license by AIP Publishing.
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