期刊
JOURNAL OF APPLIED PHYSICS
卷 127, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5127583
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资金
- MEXT [17H04922, 16H02095, 18H05345, 18H03860]
- CREST Program of the Japan Science and Technology Corporation [JPMJCR1777]
- Spintronics Research Network of Japan (Spin-RNJ)
- Grants-in-Aid for Scientific Research [18H03860, 18H05345, 16H02095, 17H04922] Funding Source: KAKEN
We study the temperature dependence of magnetic anisotropy (MA) of ferromagnetic semiconductor (Ga-0.7,Fe-0.3)Sb thin films with thicknesses of 20 nm and 40 nm using ferromagnetic resonance. With decreasing temperature from 300 to 10 K, the easy magnetization axis of the 40-nm-thick film changes from in-plane to perpendicular at 250 K, while that of the 20-nm-thick film lies in the film plane at all measurement temperatures (10-300 K). In the 40-nm-thick film, the uniaxial perpendicular anisotropy (K-2 perpendicular to) significantly increases with decreasing temperature and surpasses the thin-film shape anisotropy, leading to perpendicular magnetic anisotropy (PMA). We present a possible scenario that the increase in K-2 perpendicular to originates from the formation of the Fe-rich nanocolumns with the perpendicular shape anisotropy, which induces the PMA in the whole film at low temperatures due to carrier-mediated exchange interactions between Fe spin in the Fe-rich nanocolumns and Fe spin in the (Ga,Fe)Sb matrix. Our findings on the temperature dependence of MA of heavily Fe-doped (Ga,Fe)Sb provide insights into the mechanism of high-Curie-temperature ferromagnetism.
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