期刊
JOURNAL OF APPLIED PHYSICS
卷 126, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5132345
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资金
- Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan, through its Program for research and development of next-generation semiconductor to realize energy-saving society
Achieving efficient p-type conduction in Mg-implanted GaN depends largely on postimplantation annealing conditions. Here, we study the effect of postimplantation annealing on the evolution of defects and their interactions with implanted Mg ions by using scanning transmission electron microscopy and atom probe tomography. We found that Mg clusters start to form by annealing the implanted sample above 1000 degrees C. In addition to the Mg clusters, stacking faults form at an annealing temperature of 1300 degrees C. The Mg concentrations of about 2-3 orders of magnitude higher than implanted Mg were segregated at the stacking faults. Nanobeam electron diffraction analysis revealed no distinct phase other than GaN formed at the Mg-enriched defects, suggesting that Mg is substituted for Ga in the GaN lattice at the edge of the stacking faults. Published under license by AIP Publishing.
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