期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 830, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.154643
关键词
SiC@SiO2 nanoparticles; Microwave absorption; Lightweight; Attenuation mechanism
资金
- National Natural Science Foundation of China [51672144, 51572137, 51702181]
- Key Research and Development Program of Shandong Province [2019GGX102055]
- Natural Science Foundation of Shandong Province [ZR2017BB013, ZR2019BEM042]
- Higher Educational Science and Technology Program of Shandong Province [J17KA014, J18KA001, J18KA033]
- Taishan Scholars Program of Shandong Province [ts201511034]
- Overseas Taishan Scholars Program
Broadband gap semiconductor silicon carbide (SiC) is regarded as a promising microwave absorber depending on its peculiar electrical and physicochemical characteristics. Herein, to explore a lightweight SiC-based microwave absorber with practical application potential as well as strong attenuation and broadband, SiC@SiO2 nanoparticles (SiC@SiO2 NPs) were successfully fabricated by a catalyst-free pyrolysis strategy using polycarbosilane (PCS) as precursor. According to systematic investigation results concerning the electromagnetic parameters, a reasonable synergistic mechanism integrated multiple reflections, Debye relaxation and interfacial polarization relaxation was proposed to demonstrate the superior microwave absorption performances of SiC@SiO2 NPs. The microwave absorption investigation exhibits that the corresponding minimal reflection loss (RL) of -45.53 dB with broad effective absorption bandwidth (EAB) of 5.52 GHz (12.48-18.0 GHz) almost covering the whole Ku-band can be achieved at the matching thickness of 1.85 mm, suggesting their superior dissipation capability. (c) 2020 Elsevier B.V. All rights reserved.
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