期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 59, 期 1, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/1347-4065/ab6004
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资金
- Startup Foundation for Introducing Talent of NUIST [2019r036]
- Natural Science Foundation of the Jiangsu Higher Education Institutions of China [19KJB510006]
The structural and optical properties for a nonpolar GaN epilayer grown with an in situ SiNx interlayer was studied intensively. The superficial defects were decreased by 83% and root-mean-square was reduced by 61% for nonpolar GaN with an SiNx interlayer. The in situ SiNx was revealed to be powerful to block basal-plane stacking faults (BSFs) in nonpolar GaN because BSF density was reduced from 1.83 x 10(5) to 8.13 x 10(4) cm(-1) and BSF-related emission was remarkably suppressed by the SiNx interlayer. Moreover, the fast decay lifetime increased from 16.2 to 71.1 ps, which implied the non-radiative recombination in nonpolar GaN was significantly suppressed after the insertion of the SiNx layer.
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