Theoretical and simulation study in defective semiconductor layer that incorporated with superconducting-dielectric photonic crystal

In this work, the transfer matrix method (TMM) is used to calculate the transmission of superconductor-dielectric 1D photonic crystal with central defect of semiconductor material (GaAs) at high superconductor critical temperature (T-c). It is noticed that there is a red shift to high wavelength region by increasing the thickness of constituent materials. Also we study the effect of changing the incident angle, the doping density of GaAs and the applied pressure. The results show that the sense and change of photonic bandgap and transmittance peaks based on the thickness, incident angle, doping density of GaAs and hydrostatic pressure. In the case of change the thickness and hydrostatic pressure, the PBG and peak of transmittance shifted to higher wavelengths (red shift), while in the case of changing the incident angle and doping density, the PBG and peak of transmittance shifted to shorter wavelengths (blue shift).