期刊
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS
卷 48, 期 1, 页码 115-133出版社
WILEY
DOI: 10.1002/cta.2714
关键词
CNFET; Domino; Dynamic; FOM; VLSI
CNFET devices are preferred over CMOS devices for designing high-speed digital circuits. This paper introduces a new technique Dual Chirality High-speed Domino Logic (DCHSDL) for implementing low power and high-speed domino circuits in CNFET technology. Simulations are carried out for 32 nm Stanford CNFET model in HSPICE for 2, 4, 8 and 16 input domino OR gates at a clock frequency of 200 MHz on a DC supply voltage of 0.9 V. The proposed domino technique shows maximum power reduction of 82.55% and maximum delay reduction of 57.97% compared to CPVT technique in CNFET technology at a frequency of 200 MHz. The proposed circuit shows maximum power reduction of 97.90% compared to its analogous circuit in CMOS technology for a 2-input domino OR gate. The proposed technique shows maximum improvement of 1.05x to 1.63x in unity noise gain (UNG) compared to various existing techniques in CNFET technology at a frequency of 200 MHz. The 1-bit Full Adder designed using the proposed technique shows a power reduction of 16.91% and a delay reduction of 23.64% compared to standard FDL 1-bit Full Adder.
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