期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 35, 期 2, 页码 1882-1898出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2019.2922112
关键词
Active gate driver (AGD); EMI; silicon carbide; trajectory model
资金
- U.S. National Science Foundation (NSF) within the Industry/University Cooperative Research Center (I/UCRC) on Grid Connected Advanced Power Electronic Systems (GRAPES) [IIP-1439700]
State-of-the-art silicon carbide (SiC) power devices provide superior performance over silicon devices with much higher switching frequencies/speed and lower losses. High switching speed is preferred for achieving low switching loss, yet high dv/dt and di/dt can result in high EMI emission during switching transients. These switching dynamics can be controlled by the device gate driving strategy. The multi-level active gate driver (AGD) approach is able to tradeoff the switching losses with the dv/dt and di/dt for each switching transient. A novel three-level (3-L) AGD for SiC power MOSFET trajectory control is introduced. Its turnoff profile has a shorter turn-off delay compared to any existing methodology. Accordingly, a comprehensive datasheet-driven trajectory model for the online model-based optimization of the 3-L turn-off is introduced. The main factors that impact the 3-L turnoff performance are analyzed with this model. The experimental results of double pulse tests validate the approach. Additionally, the benefits of the proposed 3-L AGD method over two-stage turn-off and conventional gate drivers on themarket are illustrated through experiments.
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