4.4 Article

Simulations on the Effect of Magnetic Anisotropy on Switching of an Easy Cone Magnetized Free Layer

期刊

IEEE TRANSACTIONS ON MAGNETICS
卷 56, 期 3, 页码 -

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2019.2942339

关键词

Cone state; magnetic anisotropy; magnetic random access memory; voltage-controlled magnetization switching

资金

  1. Ministry of Education, Culture, Sports, Science and Technology [18H01862]
  2. Grants-in-Aid for Scientific Research [18H01862] Funding Source: KAKEN

向作者/读者索取更多资源

The easy cone state of magnetization that arises as a result of a competition between the second- and fourth-order perpendicular magnetic anisotropies has the advantage of a non-zero electric-field torque without the application of a bias magnetic field and is thus a potential candidate for purely voltage-driven magnetic storage devices. In this article, the onset of the easy cone state of magnetization is simulated in a ferromagnet film. Subsequently, the switching field and time for voltage-controlled magnetization switching process are studied as a function of the inclination angle of the easy cone state from the film normal in the range of 0 degrees-45 degrees. The switching field is found to decrease with decreasing anisotropy. The switching time is found to become faster for higher inclination angle of the easy cone state due to an increase in its torque.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据