期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 3, 页码 1334-1339出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2969887
关键词
Energy filtering; graphene nanoribbon field-effect transistor (GNRFET); nonequilibrium Green's function (NEGF); subthreshold swing (SS); superlattice (SL)
Our aim is to improve the switching performance of the graphene nanoribbon field-effect transistors (GNRFETs), exploiting the concept of energy filtering. Within the proposed scheme, a superlattice (SL) structure is used in the source of the transistor for filtering high-energy electron tail by engineering the density of states (DOS). According to simulation results, this can significantly decrease the OFF-current and the subthreshold swing (SS). A comparison of the proposed device with a conventional GNRFET and a graphene nanoribbon (GNR) tunneling field-effect transistor (GNRTFET) demonstrates a significant improvement. Therefore, a typical SL-GNRFET can reduce the average and the minimum of the SS to 44.6 and 12.5 mV/dec, respectively, at room temperature. Moreover, in order to optimize the proposed structure, the effects of the SL geometrical parameters on the transistor characteristics are numerically investigated.
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