期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 3, 页码 1357-1360出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2965475
关键词
Band tail; cryo-CMOS; cryogenic; disorder; inflection; interface traps; MOSFET
资金
- European Union's Horizon 2020 Research and Innovation Programme through MOS-Quito (MOS-based Quantum Information Technology) [688539]
This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of the drain current versus gate voltage, which reduces the current in weak and moderate inversion at a given gate voltage compared to the drift-diffusion current. This phenomenon is explained by introducing a Gaussian distribution of localized states centered around the band edge. The localized states are attributed to disorder and interface traps. The proposed model allows to extract the density of localized states at the interface from the dc current measurements.
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