期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 3, 页码 777-788出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2964846
关键词
Complementary metal-oxide-semiconductor (CMOS); degradation; device aging; electro-thermal annealing; gate dielectric aging; joule heat; MOSFETs; reliability; self-heating; self-recovery; stress; thermal annealing
资金
- National Research Foundation of Korea [2017H1A2A1042274, 2018R1A2A3075302, 2019M3F3A1A03079603]
- National Research Foundation of Korea [2017H1A2A1042274] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Gate dielectric damage caused by both internal and external stresses is becoming worse because of aggressive complementary metal-oxide-semiconductor (CMOS) scaling. However, conventional technologies for damage reduction using thermal annealing during fabrication have some limitations. As a result, there is a growing demand for technologies that will cure CMOS damage as a new paradigm for improving long-term reliability. This review paper reexamines self-recovery technologies, which are fully compatible with CMOS fabrication. Although self-heating has long been considered an unwanted operating side effect, it can also be favorably utilized to cure damage. Generated Joule heat arising from device operation can uniformly anneal the gate dielectric and effectively recover damage in various devices, such as conventional logic, memory, and aerospace CMOS devices, as well as thin-film transistors for displays.
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