期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 3, 页码 1120-1125出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2962267
关键词
Germanium tin; leakage current; shallow junction
资金
- Ministry of Science and Technology, Taiwan [MOST 108-2633-E-009-001]
In this article, the degradation mechanism of the Ge N+-P junctions with a thin GeSn surface layer is investigated, aiming for source/drain (S/D) application in emerging field-effect transistors. GeSn is a promising channel material with high carrier mobility, which can offer a better performance of the field-effect transistors. By performing thermal annealing at different temperatures, the reverse-biased leakage current increases apparently when annealing temperature exceeds 550 degrees C. X-ray diffraction (XRD) analysis indicates most Sn atoms escape from lattice sites while secondary-ion mass spectroscopy (SIMS) analysis indicates enhanced Sn diffusion in Ge bulk after ion implantation. Therefore, a degradation model considering Sn-defects interaction is proposed to explain the degradation of junction leakage current and possible solution is proposed.
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