期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 1, 页码 133-139出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2956193
关键词
Active region dimension; compact model; phase change memory (PCM); physical geometry; voltage oscillation
资金
- Shenzhen Key Lab Project [ZDSYS201703031405137]
- Shenzhen Science and Technology Project [JCYJ20170818114156474, JCYJ20170810163407761, JCYJ20170412150411676]
- CAS-Croucher Funding Scheme [CAS18EG01]
A SPICE model for phase change memories (PCM) without relying on macro modules is developed in this work. The crystal fraction, physical geometry, and the conduction path of the amorphous region are treated as dynamic state variables to keep track of the memory cell status during SET and RESET. The memory cell resistance is calculated based on a detail 3-D resistance model to capture its transitional behavior during switching. The detail physical formulation correctly reproduced a recent observation of oscillation during the SET operation. The model has been implemented in SPICE, and the convergence of the model is demonstrated by simulations of a complete PCM array. The use of dynamic state variables also significantly reduces the number of internal nodes to one, which helps convergence and reduces the simulation time.
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