期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 3, 页码 1014-1020出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2968592
关键词
Amorphous indium gallium zinc oxide (a-IGZO); amorphous indium gallium zinc tin oxide (a-IGZTO); high performance; mass density; thin-film transistors (TFTs)
资金
- National Research Foundation (NRF) through the Korean Government [NRF-2019R1A2C1089027]
- Ministry of Trade, Industry and Energy (MOTIE) [10080689]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10080689] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This article reports the fabrication of highperformance amorphous indium gallium zinc tin oxide (a-IGZTO) thin-film transistors (TFTs) with superior bias stability. For comparison, amorphous indium gallium zinc oxide (a-IGZO) TFTswere also investigated to clarify the origin of the superior performance of IGZTO TFTs. It was found that the simultaneous heavy loading of In and Sn into the IGZTO system facilitated an effective mass densification, leading to a reduction in tail states and deep states. The fabricated a-IGZTO TFTs exhibited a high electron mobility (mu FE) of 46.7 cm(2)/Vs, a subthreshold swing (SS) gate of 0.15 V/decade, and an ION/ OFF ratio >1 x 10(8). Furthermore, greater gate-bias stress stabilitywas observed for the IGZTO TFTs compared with the IGZO TFTs.
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