期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 55, 期 3, 页码 781-793出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2019.2952855
关键词
CMOS temperature sensor; leakage; ring oscillator (RO); supply sensitivity; thermal management
资金
- NSFC-Zhejiang Joint Fund for the Integration of Industrialization and Informatization [U1709221]
- National Natural Science Foundation of China [61574125]
This article presents a leakage-based digital temperature sensor with reduced supply sensitivity for on-chip thermal management. The sensor, featured with a novel supply sensitivity suppression mechanism, performs the temperature-to-frequency conversion by a leakage-dominated ring oscillator (LDRO) with exponential temperature dependence. Thanks to the proposed robust and reconfigurable Schmitt-trigger-based delay cell, both NMOS and PMOS leakage-based sensors can be evaluated in a single design. Fabricated in a standard 55-nm CMOS digital process, the proposed digital temperature sensor occupies a silicon area of only 1770 $\mu \text{m}<^>{2}$ and can operate under a supply ranging from 0.8 to 1.3 V, with the supply sensitivities of 2.53-5.22 degrees C/V and 2.84-5.76 degrees C/V in two working modes at room temperature, respectively. Measurement results show that the sensor achieves an inaccuracy of +/- 0.70 degrees C (3 $\sigma $ ) from -40 degrees C to 125 degrees C after two-point calibration.
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