期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 26, 期 2, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2020.2964381
关键词
Integrated optoelectronics; quantum dots; wafer; scale integration
资金
- Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy [DE-AR0001042]
- Research Grants Council of Hong Kong [16245216]
- Innovation Technology Fund of Hong Kong [ITS/273/16FP]
We report electrically pumped, continuous-wave (cw) InAs& x002F;GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4& x00B0;. No GaP, Ge buffer layers or substrate patterning is required. An anti-phase boundary free epitaxial GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) with a low threading dislocation density of 3 & x00D7; 10(7) cm(-2). Room-temperature cw lasing at similar to 1.3& x00A0;& x03BC;m has been achieved, with a minimum threshold current density of 34.6 A& x002F;cm(2) per layer, a maximum operating temperature of 80& x00A0;& x00B0;C, and a maximum single facet output power of 52 mW. A comparison of various monolithic III-V hetero-epitaxy on Si solutions is presented. Direct growth on unpatterned quasi-nominal (001) Si may yield the best material quality at the lowest lifecycle cost.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据