期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 26, 期 2, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2019.2939503
关键词
Silicon; Photonics; Bonding; High-speed optical techniques; Epitaxial growth; Optical transmitters; Indium phosphide; III-V on SOI photonic integrated circuits; hybrid integrated lasers; on-chip silicon transmitters and receivers; thermal management; silicon photonics packaging
资金
- European H2020 Program under Grant PICTURE [780930]
- European H2020 Program under Grant TIPS [644453]
Heterogeneous integration of III-V materials onto silicon photonics has experienced enormous progress in the last few years, setting the groundwork for the implementation of complex on-chip optical systems that go beyond single device performance. Recent advances on the field are expected to impact the next generation of optical communications to attain low power, high efficiency and portable solutions. To accomplish this aim, intense research on hybrid lasers, modulators and photodetectors is being done to implement optical modules and photonic integrated networks with specifications that match the market demands. Similarly, important advances on packaging and thermal management of hybrid photonic integrated circuits (PICs) are currently in progress. In this paper, we report our latest results on hybrid III-V on Si transmitters, receivers and packaged optical modules for high-speed optical communications. In addition, a review of recent advances in this field will be provided for benchmarking purposes.
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