期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 56, 期 1, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2019.2949640
关键词
Germanium; stark effect; silicon photonics; optical interconnects
资金
- imec's Industry-Affiliation Program on Optical I/O
We report on the performance of the quantum confined Stark effect (QCSE) in ultra-thin (similar to 350 nm) Ge/SiGe quantum well stacks grown on Si. We demonstrate an absorption contrast Delta alpha/alpha of 2.1 at 1 Vpp swing in QCSE stacks grown on ultra-thin (100 nm) strain relaxed GeSi buffer layers on 300 mm Si wafers. Such ultra-thin QCSE stacks will enable future integration of highly efficient QCSE electro-absorption modulators with low optical coupling loss to passive Si waveguides in a sub-micron silicon photonics platform.
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